junction temperature
英 [ˈdʒʌŋkʃn ˈtemprətʃə(r)]
美 [ˈdʒʌŋkʃn ˈtemprətʃər]
网络 结点温度; 接面温度; 接点温度; 结面温度; 结温
双语例句
- Beta radiography dating A new non-contact method based on relative radiation intensity for determining junction temperature of LEDs
射线照相法测定年代基于相对辐射强度的非接触式LED结温测量法 - By use of this model, the temperature distribution in the channel can be described and the maximum junction temperature can be calculated.
采用该模型，可描述器件有源层内温度的横向分布，并快速预估沟道的最高结温。 - An electrical-thermal conversion method is used to measure the junction temperature of the high power LED.
利用热电转换方法得到LED芯片的结温变化。 - By using pulse-driven currents, the effects of junction temperature and carrier concentration on this type of degradation can be distinguished.
藉由脉冲驱动，我们可以区分高功率氮化镓发光二极体中接面温度和注入载子浓度对发光效率衰减的影响。 - Studies on the Relationship between the Junction Temperature and Spectral Properties of High-power White LEDs
大功率白光LED的结温与发光光谱特性研究 - In this study, we have set up a system to measure LED junction temperature.
在本研究中，我们建立了一套量测发光二极体接面温度的系统。 - IGBT; measuring; junction temperature; peak rate of decrease of anode current at turn off;
绝缘门双极晶体管；测量；结温；阳极电流最大下降率； - Based on these characteristics, the uniformity of the junction temperature distribution is studied.
利用这一特性可以研究晶体管结温分布的不均匀性，计算结温分布的不均匀度，对半导体器件可靠性分析具有重要的意义。 - The relationship between the junction temperature of bipolar transistors and the Apparent temperature which is measured by Δ V BE method is studied. Thus, a new method of judging the junction temperature inhomogeneity of bipolar transistors is provided.
分析了当双极晶体管结温分布不均匀时用ΔVBE法测得的温度与器件结温分布以及测量条件的关系，提出了一种快速判断双极晶体管结温分布均匀性的方法。 - A method of judging the junction temperature inhomogeneity of bipolar transistors
双极晶体管结温分布均匀性的一种判定方法 - A Thermal Model for Electrical Measurement of the Peak Junction Temperature of Power Transistors
功率晶体管峰值结温电学测量技术中的热模型一个电学实验的改进 - Junction Temperature and Optical Output Thermal Saturation in Window Stripe Semiconductor Lasers
窗口条形半导体激光器中结温升和光输出热饱和特性分析 - When a transistor dissipates power on work, its junction temperature distribution is commonly non-uniform.
晶体管在耗散功率时，结温分布一般不均匀。 - This article expounds the fundamental principles of the p-n junction temperature sensors, introduces a highly linear circuit with only one p-n junction and a sensor circuit based on the incremental resistance of the p-n junction as well.
本文详细地论述了利用P-N结测温的基本原理。介绍了高线性度的单个P-N结测温电路和利用P-N结增量电阻测温的基本电路。 - A method for measuring and controlling the junction temperature of power transistor during succession operation life test is proposed.
为了在试验周期中了解晶体管的结温，提出一种在功率晶体管稳态工作寿命试验过程中结温的测量与控制方法。 - Research of thyristor's transient thermal impedance and junction temperature rise
晶闸管的瞬态热阻抗及其结温温升的研究 - The relation of IGBT peak rate of decrease of anode current at turn off with current and junction temperature
绝缘门双极晶体管阳极电流最大下降率与电流和结温的关系 - Measurement of Junction Temperature Inhomogeneity of Bipolar Transistors by Δ V_ ( be) Method
用ΔV（be）法对双极晶体管结温不均匀性的测量 - Study of transistor steady-state operation life test by method of controllable junction temperature
结温可控的晶体管稳态工作寿命试验方法研究 - Analyzed the influence of rising the junction temperature of LED upon performance of LED;
分析了PN结温度升高对LED性能的影响，讨论了LED灯具散热的重要性； - Junction Temperature and Thermal Resistance Restrict the Developing of High-power LED
结温与热阻制约大功率LED发展 - The junction temperature directly restricts its quality and service life as the power and heat flux increase.
随着功率和热流密度的提高，结温直接影响LED的质量和使用寿命，对LED散热设计提出了更高的要求。 - Therefore, to achieve high reliability of LEDs, junction temperature should be effectively monitored.
因此，为实现LED的高可靠性，结温必须得到有效监测。 - Instantaneous junction temperature of thyristors were calculated, and calculated through the experiments to verify the correctness.
对晶闸管的瞬时结温升进行了理论计算，并通过实验来验证计算的正确性。 - Design experiment to measure the junction temperature of power SCR in the pulsed surge discharge environment.
设计实验测量可控硅在电容储能脉冲功率源放电过程中的结温。 - Accurate measurement for LEDs junction temperature is a challenging issue in the development of high-power LEDs.
精确测试LED结温对大功率LED的发展至关重要。 - But this assumption is not true, the junction temperature distribution can be found in very uneven through infrared thermal image.
但是通过拍摄晶体管工作情况下的红外热像图可以发现的结内温度分布十分不均匀，由此说明这种假设是不成立的。 - Numerical simulation results of heat transfer also show that an ideal junction temperature of the chips can be obtained through appropriate selection of packaging material and structure under general working condition.
传热模拟的结果表明，通过适当的封装结构设计和封装材料选择，在正常工作条件下，LED芯片的结温可以保持在一个理想的温度。 - Meanwhile, packaging materials will be also degraded to cause device failure because of high junction temperature.
同时，封装材料特性也会在高结温下迅速衰减，引起器件失效。 - We also analyzed the relationship between the junction temperature with LED heat power and the convection coefficient.
然后重分析了LED发热功率和对流交换系数对LED结温的影响。